Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y
Identifieur interne : 001552 ( France/Analysis ); précédent : 001551; suivant : 001553Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPyAs1-y
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Abstract
Degenerately doped (>1019cm-3) n-type InxGa1-xAs (x∼0.67) and InPyAs1-y (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m*<0.2) and the demonstrated ability to incorporate n-type dopants into the high 1019cm-3 range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×1019cm-3, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λp∼5μm) in comparison to InGaAs films (λp∼6μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Moss-Burstein and plasma reflection characteristics of heavily doped n-type In<sub>x</sub>Ga<sub>1-x</sub>As and InP<sub>y</sub>As<sub>1-y</sub></title><author><name sortKey="Charache, G W" uniqKey="Charache G">G. W. Charache</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Bettis Laboratory, West Mifflin, Pennsylvania 15122</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Bettis Laboratory, West Mifflin</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Molecular Simulations Inc., Orsay, France</s1></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Molecular Simulations Inc., Orsay</wicri:regionArea><placeName><region type="région" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Depoy, D M" uniqKey="Depoy D">D. M. Depoy</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation></author><author><name sortKey="Raynolds, J E" uniqKey="Raynolds J">J. E. Raynolds</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation></author><author><name sortKey="Baldasaro, P F" uniqKey="Baldasaro P">P. F. Baldasaro</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation></author><author><name sortKey="Miyano, K E" uniqKey="Miyano K">K. E. Miyano</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 12210</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author><author><name sortKey="Holden, T" uniqKey="Holden T">T. Holden</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 12210</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author><author><name sortKey="Pollak, F H" uniqKey="Pollak F">F. H. Pollak</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 12210</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn</wicri:cityArea></affiliation></author><author><name sortKey="Sharps, P R" uniqKey="Sharps P">P. R. Sharps</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Research Triangle Institute, Research Triangle Park</wicri:cityArea></affiliation></author><author><name sortKey="Timmons, M L" uniqKey="Timmons M">M. L. Timmons</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Research Triangle Institute, Research Triangle Park</wicri:cityArea></affiliation></author><author><name sortKey="Geller, C B" uniqKey="Geller C">C. B. Geller</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation></author><author><name sortKey="Mannstadt, W" uniqKey="Mannstadt W">W. Mannstadt</name></author><author><name sortKey="Asahi, R" uniqKey="Asahi R">R. Asahi</name></author><author><name sortKey="Freeman, A J" uniqKey="Freeman A">A. J. Freeman</name></author><author><name sortKey="Wolf, W" uniqKey="Wolf W">W. Wolf</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Lockheed Martin, Inc., Schenectady</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0282029</idno><date when="1999-07-01">1999-07-01</date><idno type="stanalyst">PASCAL 99-0282029 AIP</idno><idno type="RBID">Pascal:99-0282029</idno><idno type="wicri:Area/Main/Corpus">014F24</idno><idno type="wicri:Area/Main/Repository">013E08</idno><idno type="wicri:Area/France/Extraction">001552</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conduction bands</term><term>Effective mass</term><term>Electro-optical effects</term><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heavily doped semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor plasma</term><term>Semiconductor thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7866F</term><term>7350M</term><term>7820J</term><term>7118</term><term>7120N</term><term>7320M</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Plasma semiconducteur</term><term>Semiconducteur fortement dopé</term><term>Effet électrooptique</term><term>Masse effective</term><term>Bande interdite</term><term>Couche mince semiconductrice</term><term>Bande conduction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Degenerately doped (>10<sup>19</sup>cm<sup>-3</sup>) n-type In<sub>x</sub>Ga<sub>1-x</sub>As (x∼0.67) and InP<sub>y</sub>As<sub>1-y</sub> (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m<sup>*</sup><0.2) and the demonstrated ability to incorporate n-type dopants into the high 10<sup>19</sup>cm<sup>-3</sup> range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×10<sup>19</sup>cm<sup>-3</sup>, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λ<sub>p</sub>∼5μm) in comparison to InGaAs films (λ<sub>p</sub>∼6μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>86</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Moss-Burstein and plasma reflection characteristics of heavily doped n-type In<sub>x</sub>Ga<sub>1-x</sub>As and InP<sub>y</sub>As<sub>1-y</sub></s1></fA08><fA11 i1="01" i2="1"><s1>CHARACHE (G. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>DEPOY (D. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>RAYNOLDS (J. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>BALDASARO (P. F.)</s1></fA11><fA11 i1="05" i2="1"><s1>MIYANO (K. E.)</s1></fA11><fA11 i1="06" i2="1"><s1>HOLDEN (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>POLLAK (F. H.)</s1></fA11><fA11 i1="08" i2="1"><s1>SHARPS (P. R.)</s1></fA11><fA11 i1="09" i2="1"><s1>TIMMONS (M. L.)</s1></fA11><fA11 i1="10" i2="1"><s1>GELLER (C. B.)</s1></fA11><fA11 i1="11" i2="1"><s1>MANNSTADT (W.)</s1></fA11><fA11 i1="12" i2="1"><s1>ASAHI (R.)</s1></fA11><fA11 i1="13" i2="1"><s1>FREEMAN (A. J.)</s1></fA11><fA11 i1="14" i2="1"><s1>WOLF (W.)</s1></fA11><fA14 i1="01"><s1>Lockheed Martin, Inc., Schenectady, New York 12301-1072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>14 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 12210</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="04"><s1>Bettis Laboratory, West Mifflin, Pennsylvania 15122</s1></fA14><fA14 i1="05"><s1>Northwestern University, Evanston, Illinois 60201</s1><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="06"><s1>Molecular Simulations Inc., Orsay, France</s1></fA14><fA20><s1>452-458</s1></fA20><fA21><s1>1999-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0282029</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Degenerately doped (>10<sup>19</sup>cm<sup>-3</sup>) n-type In<sub>x</sub>Ga<sub>1-x</sub>As (x∼0.67) and InP<sub>y</sub>As<sub>1-y</sub> (y∼0.65) possess a number of intriguing electrical and optical properties relevant to electro-optic devices and thermophotovoltaic devices in particular. Due to the low electron effective mass of these materials (m<sup>*</sup><0.2) and the demonstrated ability to incorporate n-type dopants into the high 10<sup>19</sup>cm<sup>-3</sup> range, both the Moss-Burstein band gap shift and plasma reflection characteristics are particularly dramatic. For InGaAs films with a nominal undoped band gap of 0.6 eV and N=5×10<sup>19</sup>cm<sup>-3</sup>, the fundamental absorption edge increased to 1.27 eV. InPAs films exhibit a shorter plasma wavelength (λ<sub>p</sub>∼5μm) in comparison to InGaAs films (λ<sub>p</sub>∼6μm) with similar doping concentrations. The behavior of the plasma wavelength and the fundamental absorption edge are investigated in terms of conduction band nonparabolicity and Γ-L valley separation using detailed band structure measurements and calculations. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C50M</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H20J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70A18</s0></fC02><fC02 i1="06" i2="3"><s0>001B70A20N</s0></fC02><fC02 i1="07" i2="3"><s0>001B70C20M</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7350M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7820J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7118</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7120N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7320M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Plasma semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor plasma</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur fortement dopé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Heavily doped semiconductors</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Effet électrooptique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electro-optical effects</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Masse effective</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Effective mass</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Bande conduction</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Conduction bands</s0></fC03><fN21><s1>172</s1></fN21><fN47 i1="01" i2="1"><s0>9923M000255</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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